These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
·1.8A, 600V, RDS(on) = 5.0 @VGS = 10 V
·Low gate charge ( typical 12.5 nC)
·Low Crss ( typical 7.6 pF)
·100% avalanche tested
·Improved dv/dt capability